Silicon carbide (SiC) and gallium nitride (GaN) power devices are revolutionizing the power electronics industry. EPC manufactures GaN devices with operational voltages ranging from 15 V to 350 V. PI ...

Among the many features offered by electronic simulation software, the .MEAS directive represents a quite powerful tool for analyzing and quantifying the behavior of simulated circuits. The .MEAS ...

During the Capital Market Day, STMicroelectronics announced its China-for-China strategy, aimed at creating a local production ecosystem to better serve the huge Chinese market. The multinational ...

The 2024 Electronica Conference showcased revolutionary advancements in power solutions, enabling smarter, more efficient, and environmentally friendly innovations across various industries. Infineon ...

The first-of-its kind technological partnership positions France as a leader in the emerging synthetic diamond sector dedicated to power electronics applications. Diamfab, a semiconductor diamond deep ...

Today the use of USB type-C ports with PD adoption is greatly increasing as a large variety of devices must transfer and receive data at a fast rate while being supplied with the proper voltage and ...

The lateral High Electron Mobility Transistor (HEMT) is the most widely used GaN device. Gallium Nitride (GaN) based power semiconductors have many advantages in power conversion. They are seeing ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on 240W USB Reference Design, WBG Multilevel Inverters, and Data Center Efficiency! Here’s a RoundUp of ...